NSVBC846BM3T5G Transistor Datasheet & Specifications
NPN
SOT-723
General Purpose
onsemi
VCEO
65V
Ic Max
100mA
Pd Max
265mW
hFE Gain
150
Quick Reference
The NSVBC846BM3T5G is a NPN bipolar transistor in a SOT-723 package by onsemi. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the NSVBC846BM3T5G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-723 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 65V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 265mW | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 15nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BC846BM3T5G | NPN | SOT-723 | 65V | 100mA | 640mW |
| BC846BM3 | NPN | SOT-723 | 65V | 100mA | 265mW |