NSS20601CF8T1G Transistor Datasheet & Specifications
NPN
SMD-8P,3.2x1.6mm
High Power
onsemi
VCEO
20V
Ic Max
6A
Pd Max
1.4W
hFE Gain
360
Quick Reference
The NSS20601CF8T1G is a NPN bipolar transistor in a SMD-8P,3.2x1.6mm package by onsemi. This datasheet provides complete specifications including 20V breakdown voltage and 6A continuous collector current. Download the NSS20601CF8T1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SMD-8P,3.2x1.6mm | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 1.4W | Power dissipation |
| DC Current Gain | 360 | hFE / Beta |
| Frequency | 140MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |