NSS20500UW3T2G Transistor Datasheet & Specifications
PNP
W-DFN-3(2x2)
General Purpose
onsemi
VCEO
20V
Ic Max
5A
Pd Max
1.5W
hFE Gain
250
Quick Reference
The NSS20500UW3T2G is a PNP bipolar transistor in a W-DFN-3(2x2) package by onsemi. This datasheet provides complete specifications including 20V breakdown voltage and 5A continuous collector current. Download the NSS20500UW3T2G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | W-DFN-3(2x2) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 250 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 10mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |