NSS20300MR6T1G Transistor Datasheet & Specifications
PNP
TSOP-6
General Purpose
onsemi
VCEO
20V
Ic Max
3A
Pd Max
1.06W
hFE Gain
100
Quick Reference
The NSS20300MR6T1G is a PNP bipolar transistor in a TSOP-6 package by onsemi. This datasheet provides complete specifications including 20V breakdown voltage and 3A continuous collector current. Download the NSS20300MR6T1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TSOP-6 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.06W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |