NSM80100MT1G Transistor Datasheet & Specifications
PNP
SC-74-6
General Purpose
onsemi
VCEO
80V
Ic Max
500mA
Pd Max
400mW
hFE Gain
120
Quick Reference
The NSM80100MT1G is a PNP bipolar transistor in a SC-74-6 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the NSM80100MT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SC-74-6 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 400mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |