NJVMJB45H11T4G Transistor Datasheet & Specifications
PNP
D2PAK
High Power
onsemi
VCEO
80V
Ic Max
10A
Pd Max
2W
hFE Gain
40
Quick Reference
The NJVMJB45H11T4G is a PNP bipolar transistor in a D2PAK package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 10A continuous collector current. Download the NJVMJB45H11T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | D2PAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJB45H11T4G | PNP | D2PAK | 80V | 10A | 50W |