NJL3281DG Transistor Datasheet & Specifications
NPN
TO-264-5
High Power
onsemi
VCEO
260V
Ic Max
15A
Pd Max
200W
hFE Gain
75
Quick Reference
The NJL3281DG is a NPN bipolar transistor in a TO-264-5 package by onsemi. This datasheet provides complete specifications including 260V breakdown voltage and 15A continuous collector current. Download the NJL3281DG datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-264-5 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 260V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 75 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | 3V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 50uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |