NJD1718T4G Transistor Datasheet & Specifications
PNP
DPAK-3
General Purpose
onsemi
VCEO
50V
Ic Max
2A
Pd Max
1.68W
hFE Gain
70
Quick Reference
The NJD1718T4G is a PNP bipolar transistor in a DPAK-3 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the NJD1718T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.68W | Power dissipation |
| DC Current Gain | 70 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |