MMS9012HE3-H-HXY Transistor Datasheet & Specifications

PNP SOT-23 General Purpose HXY MOSFET
VCEO
25V
Ic Max
500mA
Pd Max
300mW
hFE Gain
350

Quick Reference

The MMS9012HE3-H-HXY is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 25V breakdown voltage and 500mA continuous collector current. Download the MMS9012HE3-H-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain350hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat600mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
SS8550 PNP SOT-23 25V 1.5A 350mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
S9012 PNP SOT-23 25V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW