MMDT3906SG Transistor Datasheet & Specifications
PNP
SOT-23-6
General Purpose
PJSEMI
VCEO
40V
Ic Max
200mA
Pd Max
1W
hFE Gain
300
Quick Reference
The MMDT3906SG is a PNP bipolar transistor in a SOT-23-6 package by PJSEMI. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMDT3906SG datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | PJSEMI | Original Manufacturer |
| Package | SOT-23-6 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 250MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| TPIMT17 | PNP | SOT-23-6 | 50V | 600mA | 300mW |