MMDT2227-JSM Transistor Datasheet & Specifications
NPN+PNP
SOT-363-6L
General Purpose
JSMSEMI
VCEO
60V
Ic Max
600mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMDT2227-JSM is a NPN+PNP bipolar transistor in a SOT-363-6L package by JSMSEMI. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the MMDT2227-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-363-6L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |