MMBTA63LT1G Transistor Datasheet & Specifications
PNP
SOT-23
General Purpose
onsemi
VCEO
-
Ic Max
500mA
Pd Max
225mW
hFE Gain
5000
Quick Reference
The MMBTA63LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including - breakdown voltage and 500mA continuous collector current. Download the MMBTA63LT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | - | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 225mW | Power dissipation |
| DC Current Gain | 5000 | hFE / Beta |
| Frequency | 125MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃@(Tj) | Operating temp |