MMBTA63-7-F Transistor Datasheet & Specifications

PNP SOT-23 General Purpose DIODES
VCEO
30V
Ic Max
500mA
Pd Max
300mW
hFE Gain
10000

Quick Reference

The MMBTA63-7-F is a PNP bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 30V breakdown voltage and 500mA continuous collector current. Download the MMBTA63-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain10000hFE / Beta
Frequency125MHzTransition speed (fT)
VCEsat1.5VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT2907A PNP SOT-23 60V 600mA 300mW