MMBT8050D Transistor Datasheet & Specifications

PNP SOT-23 General Purpose PJSEMI
VCEO
25V
Ic Max
600mA
Pd Max
350mW
hFE Gain
400

Quick Reference

The MMBT8050D is a PNP bipolar transistor in a SOT-23 package by PJSEMI. This datasheet provides complete specifications including 25V breakdown voltage and 600mA continuous collector current. Download the MMBT8050D datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPJSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic600mACollector current
Pd350mWPower dissipation
DC Current Gain400hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
SS8550 PNP SOT-23 25V 1.5A 350mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
2SA1298-Y,LF PNP SOT-23 25V 800mA 200mW
MMBT5401 PNP SOT-23 150V 600mA 300mW