MMBT589LT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
30V
Ic Max
1A
Pd Max
310mW
hFE Gain
300

Quick Reference

The MMBT589LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 30V breakdown voltage and 1A continuous collector current. Download the MMBT589LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic1ACollector current
Pd310mWPower dissipation
DC Current Gain300hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
FMMT591TA PNP SOT-23 60V 1A 500mW
DSS5240TQ-7 PNP SOT-23 40V 2A 730mW
FMMT591 PNP SOT-23 60V 1A 500mW
PBSS5140T,215 PNP SOT-23 40V 1A 450mW
FMMT720QTA PNP SOT-23 40V 1.5A 806mW