MMBT5551M3T5G Transistor Datasheet & Specifications

NPN SOT-723 General Purpose onsemi
VCEO
160V
Ic Max
60mA
Pd Max
640mW
hFE Gain
80
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Quick Reference

The MMBT5551M3T5G is a NPN bipolar transistor in a SOT-723 package by onsemi. This datasheet provides complete specifications including 160V breakdown voltage and 60mA continuous collector current. Download the MMBT5551M3T5G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-723Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic60mACollector current
Pd640mWPower dissipation
DC Current Gain80hFE / Beta
Frequency-Transition speed (fT)
VCEsat150mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-723 NPN Transistors ›