MMBT5551 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose luJing
VCEO
160V
Ic Max
600mA
Pd Max
300mW
hFE Gain
-

Quick Reference

The MMBT5551 is a NPN bipolar transistor in a SOT-23 package by luJing. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5551 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerluJingOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic600mACollector current
Pd300mWPower dissipation
DC Current Gain-hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mV@50mA,5.0mASaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551-TP NPN SOT-23 160V 600mA 300mW
MMBT5551-E NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551(RANGE:200-300) NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW