MMBT5551-6AF Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
FOSAN
VCEO
150V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300
Quick Reference
The MMBT5551-6AF is a NPN bipolar transistor in a SOT-23 package by FOSAN. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMBT5551-6AF datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FOSAN | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 250mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| FMMT495TA | NPN | SOT-23 | 150V | 1A | 500mW |
| MMBT5551-TP | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551-E | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551(RANGE:200-300) | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| FMMT625TA | NPN | SOT-23 | 150V | 1A | 625mW |