MMBT5401D Transistor Datasheet & Specifications
PNP
SOT-23-6L
General Purpose
BORN
VCEO
150V
Ic Max
200mA
Pd Max
200mW
hFE Gain
-
Quick Reference
The MMBT5401D is a PNP bipolar transistor in a SOT-23-6L package by BORN. This datasheet provides complete specifications including 150V breakdown voltage and 200mA continuous collector current. Download the MMBT5401D datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | BORN | Original Manufacturer |
| Package | SOT-23-6L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 500mV@50mA,5mA | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |