MMBT5401BD Transistor Datasheet & Specifications
PNP
SOT-26
General Purpose
Huixin
VCEO
150V
Ic Max
200mA
Pd Max
300mW
hFE Gain
240
Quick Reference
The MMBT5401BD is a PNP bipolar transistor in a SOT-26 package by Huixin. This datasheet provides complete specifications including 150V breakdown voltage and 200mA continuous collector current. Download the MMBT5401BD datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Huixin | Original Manufacturer |
| Package | SOT-26 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 240 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |