MMBT4126LT3G-HXY Transistor Datasheet & Specifications

PNP SOT-23 General Purpose HXY MOSFET
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300

Quick Reference

The MMBT4126LT3G-HXY is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT4126LT3G-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd200mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
MMBT3906 PNP SOT-23 40V 200mA 300mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMT591ATA PNP SOT-23 40V 1A 500mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBT3906Q-7-F PNP SOT-23 40V 200mA 350mW