MMBT3906LT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
40V
Ic Max
200mA
Pd Max
225mW
hFE Gain
60

Quick Reference

The MMBT3906LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd225mWPower dissipation
DC Current Gain60hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
MMBT3906 PNP SOT-23 40V 200mA 300mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMT591ATA PNP SOT-23 40V 1A 500mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBT3906Q-7-F PNP SOT-23 40V 200mA 350mW