MMBT3906LP(MS) Transistor Datasheet & Specifications

PNP DFN1006-3 General Purpose MSKSEMI
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300
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Quick Reference

The MMBT3906LP(MS) is a PNP bipolar transistor in a DFN1006-3 package by MSKSEMI. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906LP(MS) datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageDFN1006-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd200mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all DFN1006-3 PNP Transistors ›