MMBT3906LP-7 Transistor Datasheet & Specifications
PNP
DFN-3(1x0.6)
General Purpose
DIODES
VCEO
40V
Ic Max
200mA
Pd Max
1W
hFE Gain
100
Quick Reference
The MMBT3906LP-7 is a PNP bipolar transistor in a DFN-3(1x0.6) package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906LP-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3(1x0.6) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT3906LP-7B | PNP | DFN-3(1x0.6) | 40V | 200mA | 1W |
| DSS3540M-7B | PNP | DFN-3(1x0.6) | 40V | 500mA | 1W |