MMBT3906 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose Chao He
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
-

Quick Reference

The MMBT3906 is a PNP bipolar transistor in a SOT-23 package by Chao He. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerChao HeOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd200mWPower dissipation
DC Current Gain-hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mV@50mA,5mASaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
MMBT3906 PNP SOT-23 40V 200mA 300mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMT591ATA PNP SOT-23 40V 1A 500mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBT3906Q-7-F PNP SOT-23 40V 200mA 350mW