MMBT3904WT1G Transistor Datasheet & Specifications

NPN SC-70(SOT-323) General Purpose onsemi
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
40

Quick Reference

The MMBT3904WT1G is a NPN bipolar transistor in a SC-70(SOT-323) package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904WT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd150mWPower dissipation
DC Current Gain40hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT4401WT1G NPN SC-70(SOT-323) 40V 600mA 150mW
MMBT2222AWT1G NPN SC-70(SOT-323) 40V 600mA 150mW
SMMBT3904WT1G NPN SC-70(SOT-323) 40V 200mA 150mW
LMBT3904WT1G NPN SC-70(SOT-323) 40V 200mA 150mW