MMBT3904TT1G Transistor Datasheet & Specifications
NPN
SOT-416
General Purpose
onsemi
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
100
Quick Reference
The MMBT3904TT1G is a NPN bipolar transistor in a SOT-416 package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904TT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-416 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |