MMBT3904T Transistor Datasheet & Specifications

NPN SOT-523-3 General Purpose MDD(Microdiode Semiconductor)
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
300
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Quick Reference

The MMBT3904T is a NPN bipolar transistor in a SOT-523-3 package by MDD(Microdiode Semiconductor). This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904T datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMDD(Microdiode Semiconductor)Original Manufacturer
PackageSOT-523-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd150mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mV@50mA,5mASaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-523-3 NPN Transistors ›