MMBT3904LP-7B Transistor Datasheet & Specifications

NPN DFN-3(1x0.6) General Purpose DIODES
VCEO
40V
Ic Max
200mA
Pd Max
1W
hFE Gain
100

Quick Reference

The MMBT3904LP-7B is a NPN bipolar transistor in a DFN-3(1x0.6) package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904LP-7B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageDFN-3(1x0.6)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd1WPower dissipation
DC Current Gain100hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT3904LP-7 NPN DFN-3(1x0.6) 40V 200mA 1W
DSS2540M-7B NPN DFN-3(1x0.6) 40V 500mA 1W