MMBT3904FZ-7B Transistor Datasheet & Specifications

NPN DFN-3(0.6x0.6) General Purpose DIODES
VCEO
40V
Ic Max
200mA
Pd Max
350mW
hFE Gain
100
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Quick Reference

The MMBT3904FZ-7B is a NPN bipolar transistor in a DFN-3(0.6x0.6) package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904FZ-7B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageDFN-3(0.6x0.6)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd350mWPower dissipation
DC Current Gain100hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

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