MMBT2907AM3T5G-MS Transistor Datasheet & Specifications
PNP
SOT-723
General Purpose
MSKSEMI
VCEO
60V
Ic Max
500mA
Pd Max
100mW
hFE Gain
300
Quick Reference
The MMBT2907AM3T5G-MS is a PNP bipolar transistor in a SOT-723 package by MSKSEMI. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the MMBT2907AM3T5G-MS datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | SOT-723 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 100mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |