MJW21195G Transistor Datasheet & Specifications
PNP
TO-247
High Power
onsemi
VCEO
250V
Ic Max
16A
Pd Max
200W
hFE Gain
20
Quick Reference
The MJW21195G is a PNP bipolar transistor in a TO-247 package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 16A continuous collector current. Download the MJW21195G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 20 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | -65โ~+150โ | Operating temp |