MJH6287G Transistor Datasheet & Specifications
PNP
TO-247
High Power
onsemi
VCEO
100V
Ic Max
20A
Pd Max
160W
hFE Gain
750
Quick Reference
The MJH6287G is a PNP bipolar transistor in a TO-247 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 20A continuous collector current. Download the MJH6287G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 20A | Collector current |
| Pd | 160W | Power dissipation |
| DC Current Gain | 750 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 3V@20A,200mA | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃@(Tj) | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| TIP36C | PNP | TO-247 | 100V | 25A | 125W |