MJH11019G Transistor Datasheet & Specifications
PNP
TO-247-3
High Power
onsemi
VCEO
200V
Ic Max
15A
Pd Max
150W
hFE Gain
-
Quick Reference
The MJH11019G is a PNP bipolar transistor in a TO-247-3 package by onsemi. This datasheet provides complete specifications including 200V breakdown voltage and 15A continuous collector current. Download the MJH11019G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-247-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 200V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 150W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 4V@15A,150mA | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃@(Tj) | Operating temp |