MJF3055G Transistor Datasheet & Specifications
NPN
TO-220FP
High Power
onsemi
VCEO
90V
Ic Max
10A
Pd Max
30W
hFE Gain
100
Quick Reference
The MJF3055G is a NPN bipolar transistor in a TO-220FP package by onsemi. This datasheet provides complete specifications including 90V breakdown voltage and 10A continuous collector current. Download the MJF3055G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220FP | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 90V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 30W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 2MHz | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |