MJE350 Transistor Datasheet & Specifications
PNP
TO-126
General Purpose
HXY MOSFET
VCEO
300V
Ic Max
500mA
Pd Max
625mW
hFE Gain
-
Quick Reference
The MJE350 is a PNP bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJE350 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 500mV@20mA,2mA | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |