MJE350 Transistor Datasheet & Specifications

PNP SOT-32-3 High Power ST
VCEO
300V
Ic Max
500mA
Pd Max
20.8W
hFE Gain
30
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Quick Reference

The MJE350 is a PNP bipolar transistor in a SOT-32-3 package by ST. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJE350 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageSOT-32-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic500mACollector current
Pd20.8WPower dissipation
DC Current Gain30hFE / Beta
Frequency-Transition speed (fT)
VCEsat500mVSaturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-32-3 PNP Transistors ›