MJE340G Transistor Datasheet & Specifications

NPN TO-225-3 High Power onsemi
VCEO
300V
Ic Max
500mA
Pd Max
20W
hFE Gain
30
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Quick Reference

The MJE340G is a NPN bipolar transistor in a TO-225-3 package by onsemi. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJE340G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic500mACollector current
Pd20WPower dissipation
DC Current Gain30hFE / Beta
Frequency-Transition speed (fT)
VCEsat-Saturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-65℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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