MJD50T4G Transistor Datasheet & Specifications
NPN
TO-252-2(DPAK)
High Power
onsemi
VCEO
400V
Ic Max
1A
Pd Max
15W
hFE Gain
30
Quick Reference
The MJD50T4G is a NPN bipolar transistor in a TO-252-2(DPAK) package by onsemi. This datasheet provides complete specifications including 400V breakdown voltage and 1A continuous collector current. Download the MJD50T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 15W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 200uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 3DD13003(RANGE:20-25) | NPN | TO-252-2(DPAK) | 400V | 1.5A | 1.25W |