MJD47T4G Transistor Datasheet & Specifications
NPN
DPAK
General Purpose
onsemi
VCEO
250V
Ic Max
1A
Pd Max
1.56W
hFE Gain
30
Quick Reference
The MJD47T4G is a NPN bipolar transistor in a DPAK package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 1A continuous collector current. Download the MJD47T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 1.56W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |