MJD44H11-1G Transistor Datasheet & Specifications
NPN
TO-251(IPAK)
High Power
onsemi
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
60
Quick Reference
The MJD44H11-1G is a NPN bipolar transistor in a TO-251(IPAK) package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD44H11-1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-251(IPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 20W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 85MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |