MJD350T4 Transistor Datasheet & Specifications
PNP
TO-252
High Power
ST
VCEO
300V
Ic Max
500mA
Pd Max
15W
hFE Gain
30
Quick Reference
The MJD350T4 is a PNP bipolar transistor in a TO-252 package by ST. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJD350T4 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 15W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | 3V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD350 | PNP | TO-252 | 300V | 500mA | 1.56W |