MJD350-13 Transistor Datasheet & Specifications
PNP
TO-252(DPAK)
General Purpose
DIODES
VCEO
300V
Ic Max
500mA
Pd Max
1.56W
hFE Gain
30
Quick Reference
The MJD350-13 is a PNP bipolar transistor in a TO-252(DPAK) package by DIODES. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJD350-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 1.56W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |