MJD340 Transistor Datasheet & Specifications
NPN
TO-252
General Purpose
Shikues
VCEO
300V
Ic Max
500mA
Pd Max
625mW
hFE Gain
300
Quick Reference
The MJD340 is a NPN bipolar transistor in a TO-252 package by Shikues. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJD340 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Shikues | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 500nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 13003 | NPN | TO-252 | 420V | 1A | 1.2W |