MJD340-13 Transistor Datasheet & Specifications
NPN
DPAK-3
High Power
DIODES
VCEO
300V
Ic Max
500mA
Pd Max
15W
hFE Gain
30
Quick Reference
The MJD340-13 is a NPN bipolar transistor in a DPAK-3 package by DIODES. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJD340-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DPAK-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 15W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |