MJD3055T4G Transistor Datasheet & Specifications
NPN
TO-252(DPAK)
High Power
onsemi
VCEO
60V
Ic Max
10A
Pd Max
20W
hFE Gain
20
Quick Reference
The MJD3055T4G is a NPN bipolar transistor in a TO-252(DPAK) package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 10A continuous collector current. Download the MJD3055T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 20W | Power dissipation |
| DC Current Gain | 20 | hFE / Beta |
| Frequency | 2MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |