MJD122-TP Transistor Datasheet & Specifications

NPN DPAK(TO-252) General Purpose MCC
VCEO
100V
Ic Max
8A
Pd Max
1.5W
hFE Gain
1000
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Quick Reference

The MJD122-TP is a NPN bipolar transistor in a DPAK(TO-252) package by MCC. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD122-TP datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMCCOriginal Manufacturer
PackageDPAK(TO-252)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic8ACollector current
Pd1.5WPower dissipation
DC Current Gain1000hFE / Beta
Frequency-Transition speed (fT)
VCEsat4V@8A,80mASaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all DPAK(TO-252) NPN Transistors ›