MJB44H11G Transistor Datasheet & Specifications

NPN TO-263-2 High Power onsemi
VCEO
80V
Ic Max
10A
Pd Max
50W
hFE Gain
60
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Quick Reference

The MJB44H11G is a NPN bipolar transistor in a TO-263-2 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 10A continuous collector current. Download the MJB44H11G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-263-2Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic10ACollector current
Pd50WPower dissipation
DC Current Gain60hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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