MJ4502G Transistor Datasheet & Specifications
PNP
TO-204
High Power
onsemi
VCEO
100V
Ic Max
30A
Pd Max
200W
hFE Gain
25
Quick Reference
The MJ4502G is a PNP bipolar transistor in a TO-204 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 30A continuous collector current. Download the MJ4502G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-204 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 30A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 2MHz | Transition speed (fT) |
| VCEsat | 800mV | Saturation voltage |
| Vebo | 4V | Emitter-Base voltage |
| Cutoff Current | 1mA | Leakage (ICBO) |
| Temp | -65โ~+200โ | Operating temp |