MJ21196G Transistor Datasheet & Specifications
NPN
TO-204
High Power
onsemi
VCEO
250V
Ic Max
16A
Pd Max
250W
hFE Gain
25
Quick Reference
The MJ21196G is a NPN bipolar transistor in a TO-204 package by onsemi. This datasheet provides complete specifications including 250V breakdown voltage and 16A continuous collector current. Download the MJ21196G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-204 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 250W | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+200℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJ15024G | NPN | TO-204 | 250V | 16A | 250W |